Project overview

	basic 2.X µm OPSDL
	narrow linewidth, tunable OPSDL
	modulated OPSDL
	high power OPSDL

The objective of this Eoropean project is to develop high-brightness, infrared (IR) semiconductor-based laser sources as an innovative photonic component for:

• advanced free-space optical (FSO) communication systems
• remote sensing for environmental protection and security applications, and
• medical diagnostics

The technology will the based on the concept of the optically pumped semiconductor disk laser (OPSDL) operating in the 2.0-2.5 µm wavelength range. The OPSDL concept is an emerging and novel class of semiconductor laser which combines the advantages of traditional solid-state lasers, namely, excellent beam quality and high average output powers, with the flexible characteristics of semiconductor diode lasers. This hybrid concept has been successfully demonstrated in the realization of visible and near-infrared (650-1100 nm) lasers, and, furthermore, has been proven to be scalable to provide output powers in excess of 30 W.

This European project will explore and exploit the group III-antimonide (III-Sb) compound semiconductor materials system, and so, develop novel 2.0-2.5 µm OPSDLs. Moreover, a modular concept will be developed, such that these lasers can be tailored to a wide range of application areas whilst retaining the intrinsic cost-effectiveness of semiconductor lasers.

Through the placement of various elements inside the resonator, we will map out the potential for wavelength tunability and pulse operation. And this, coupled with the freedom to engineer the quantum well active region over the wavelength range of the III-Sb material system, the opportunities afforded over that of traditional semiconductor lasers will be exploited to outline the full applicability of this concept.