Publications

Publications:

• N. Schulz,  M. Rattunde, C. Manz, K. Köhler, C. Wild, J. Wagner, S.-S. Beyertt, U. Brauch, T. Kübler, and A. Giesen
  Optically Pumped GaSb-based VECSEL Emitting 0.6 W at 2.3 µm
  Photon. Technol. Lett. 18, 1070 (2006)

• N. Hempler, J.-M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, D. Burns,
  Pulsed pumping of semiconductor disk lasers
  Optics Express 15, pp. 3247-3256 (2007)

• A. J. Kemp, J.-M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner and D. Burns,
  Thermal Management in 2.3µm Semiconductor Disk Lasers: a Finite Element Analysis
  IEEE Journal of Quantum Electronics, 44, 125 (2008)

• J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild and K. Köhler
  Barrier and in-well pumped GaSb-based 2.3 µm VECSELs
  Phys. Stat. Sol (c) 4, 1597 (2007)

• J.-M. Hopkins, A.J. Maclean, D. Burns, E. Riis, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner
  Tunable, single-frequency diode-pumped 2.3 µm VECSEL
  Optics Express 15, 8212 (2007)

• M. Rattunde, N. Schulz , C. Ritzenthaler, B. Rösener, C. Manz , K. Köhler , E. Wörner  and J. Wagner
  High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
  Proc. SPIE 6479, 647915-1 (2007)

• N. Schulz, M. Rattunde, C. Ritzenthaler, B. Rösener, C. Manz, K. Köhler, J. Wagner, U. Brauch
  Resonant optical in-well pumping of an (AlGaIn)(AsSb)-based vertical-external-cavity surface emitting laser emitting at 2.35 µm
  Applied Physics Letter 91, 091113 (2007)

• N. Schulz, M. Rattunde, B. Rösener, C. Manz, K. Köhler, C. Wild, J. Wagner
  Optically Pumped GaSb-Based 2.X µm VECSELs
  to be published in Springer Conference series, Proceedings of the Narrow Gap Semiconductor Conference (2007 )

• N. Schulz, M. Rattunde, C. Ritzenthaler, B. Rösener, C. Manz, K. Köhler, J. Wagner
  Effect of the cavity resoance-gain offset on the output power characteristics of GaSb-based VECSEL
  IEEE Photon Technol. Lett. 19, 1741 (2007)

• M. Rattunde, M. Kelemen, N. Schulz, J. Wagner
  High-brightness GaSb-based 2.Xµm semiconductor lasers
  in: M. Ebrahimzadeh, I.T. Sorokina (Ed.), Mid-Infrared Coherent Sources and Applications , Springer NATO Science Serries II, page 193 (2008)
  
  
• J.M. Hopkins, N. Hempler, D. Burns, N. Schulz, B. Rösener, M. Rattunde, C. Manz, K. Köhler and J. Wagner
  High-power, GaSb-based Semiconductor disk laser at 2.0µm
  Optics Lett. 33, 201, (2008)
  
  
• B.Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner
  High-Power, High-Brightness Operation of a 2.25µm (AlGaIn)(AsSb)-based Barrier-pumped Vertical-External-Cavity Surface-Emitting Laser
  IEEE Photon. Technol. Lett. 20, 502 (2008)